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gan wideband power amplifier, 28 v, 12.5 w 20 - 1000 mhz rev. v2 NPA1006 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 1 features ? gan on si hemt d - mode amplifier ? suitable for linear and saturated applications ? broadband operation from 20 - 1000 mhz ? 50 input matched, output unmatched ? 28 v operation ? 14 db gain @ 900 mhz ? 65% drain efficiency @ 900 mhz ? 100% rf tested ? lead - free 6 x 5 mm 8 - lead pdfn package ? halogen - free green mold compound ? rohs* compliant description the NPA1006 is a wideband gan power amplifier optimized for 20 - 1000 mhz operation. this amplifier has been designed for saturated and linear operation with output levels to 12.5 w (41 dbm) assembled in a lead - free 6 x 5 mm 8 - lead pdfn plastic package. the NPA1006 is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure. ordering information * restrictions on hazardous substances, european union directive 2011/65/eu. part number package NPA1006 bulk quantity NPA1006 - smb sample board functional schematic pin no. pin name function 1 v g gate voltage 2 rf in rf input 3 rf in rf input 4 n/c 1 no connection 5 n/c 1 no connection 6 rf out / v d rf output / drain voltage 7 rf out / v d rf output / drain voltage 8 n/c 1 no connection 9 paddle 2 ground pin designations 1. all no connection pins may be left floating or grounded. 2. the exposed pad centered on the package bottom must be connected to rf and dc ground. this path must also provide a low thermal resistance heat path. v g 1 2 3 4 6 5 8 7 rf in rf in n / c n / c n / c input match rf out / v d rf out / v d 9 paddle
gan wideband power amplifier, 28 v, 12.5 w 20 - 1000 mhz rev. v2 NPA1006 2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 2 dc electrical specifications: t c = 25c rf electrical specifications: t c = 25c , v ds = 28 v, i dq = 88 ma, 100 - 1000 mhz broadband characterization circuit parameter test conditions symbol min. typ. max. units drain - source leakage current v gs = - 8 v, v ds = 100 v i dlk - 6 - ma gate - source leakage current v gs = - 8 v, v ds = 0 v i glk - 3 - ma gate threshold voltage v ds = 28 v, i d = 6 ma v t - 2.5 - 1.5 - 0.5 v gate quiescent voltage v ds = 28 v, i d = 88 ma v gsq - 2.1 - 1.2 - 0.3 v on resistance v ds = 2 v, i d = 45 ma r on - 0.8 - saturated drain current v ds = 7 v pulsed, pulse width 300 s i d(sat) - 3.5 - a parameter test conditions symbol min. typ. max. units small signal gain cw, 900 mhz g ss - 15.0 - db gain cw, p out = 41 dbm, 900 mhz g p 12.5 14.0 - db saturated output power cw, 900 mhz p sat - 42.9 - d bm drain efficiency cw, p out = 41 dbm, 900 mhz d 61 65 - % power added efficiency cw, p out = 41 dbm, 900 mhz pae 57.5 62.4 - % drain efficiency cw, 900 mhz dsat - 70 - % drain voltage (v ds ) drain voltage v ds - 28 - v ruggedness all phase angles ? vswr = 15:1, no device damage
gan wideband power amplifier, 28 v, 12.5 w 20 - 1000 mhz rev. v2 NPA1006 3 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 3 absolute maximum ratings 3,4,5 3. exceeding any one or combination of these limits may cause permanent damage to this device. 4. macom does not recommend sustained operation near these survivability limits. 5. operating at nominal conditions with t j 200c will ensure mttf > 1 x 10 6 hours. handling procedures please observe the following precautions to avoid damage: static sensitivity gallium nitride circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these hbm class 1b devices. parameter absolute maximum drain source voltage, v ds 100 v gate source voltage, v gs - 10 to 3 v gate current, i g 12 ma junction temperature, t j + 200 c operating temperature - 4 0 c to +85 c storage temperature - 65 c to +150c esd min. - human body model (hbm) +500 v 6. junction temperature (t j ) measured using ir microscopy. case temperature measured using thermocouple embedded in heat - sink. parameter test conditions symbol typical units thermal resistance v ds = 28 v, t j = 200c ? jc 4.6 c/w thermal characteristics 6
gan wideband power amplifier, 28 v, 12.5 w 20 - 1000 mhz rev. v2 NPA1006 4 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 4 parts measured on the characterization board (20 - mil thick ro4350). the pcbs electrical and thermal ground is provided using a standard - plated densely packed via hole array (see recommended via pattern). matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. recommended tuning solution component placement, transmission lines, and details are shown on the next page. description turning the device on 1. set v gs to the pinch - off (v p ), typically - 5 v. 2. turn on v ds to nominal voltage (28 v). 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v gs down to v p. 3. decrease v ds down to 0 v. 4. turn off v gs . bias sequencing recommended via pattern (all dimensions shown as inches) characterization circuit and recommended tuning solution 100 - 1000 mhz broadband c 1 10 m v gs v ds npa 1006 c 3 4 . 7 m m m rf out r 1 49 . 9 w c 4 2400 pf rf in c 5 4 . 7 pf l 2 5 . 4 nh
gan wideband power amplifier, 28 v, 12.5 w 20 - 1000 mhz rev. v2 NPA1006 5 5 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 5 reference value tolerance manufacturer part number c1 10 f 20% tdk c2012x5r1c106m085ac c2 0.01 f 10% avx 06031c103jat2a c3 4.7 f 10% tdk c5750x7r2a475k230ka c4, c6 2400 pf - dielectric labs, inc. c08bl242x - 5un - x0 c5 4.7 pf 0.1 pf murata gqm2195c2e4r7bb12 r1 49.9 ? 1% panasonic erj - 6enf49r9v l1 0.9 h 10% coilcraft 1008af - 901xjlc l2 5.4 nh 5% coilcraft 0906 - 5_lb pcb rogers ro4350, ? r =3.5, 0.020 heat sink copper heat sink 3.0 x 2.75 parts list characterization circuit and recommended tuning solution 100 - 1000 mhz broadband rf in rf out v gs v ds l 2 c 5 c 6 c 4 r 1 c 2 l 1 c 3 c 1
gan wideband power amplifier, 28 v, 12.5 w 20 - 1000 mhz rev. v2 NPA1006 6 6 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 6 deembedded device s - parameters with r g = 470 performance vs. input return loss at p out = 41 dbm broadband circuit s - parameters performance vs. frequency at p out = 41 dbm typical performance as measured in the broadband 100 - 1000 mhz characterization circuit: cw, v ds = 28 v, i dq = 88 ma (unless otherwise noted) 0 5 10 15 20 25 -25 -20 -15 -10 -5 0 0 0.2 0.4 0.6 0.8 1 1.2 s21 s11 s22 s 21 (db) s 11 , s 22 (db) frequency (ghz) 0 5 10 15 20 25 -25 -20 -15 -10 -5 0 0 0.2 0.4 0.6 0.8 1 1.2 s21 s11 s22 s 21 (db) s 11 , s 22 (db) frequency (ghz) 10 11 12 13 14 15 16 30 40 50 60 70 80 90 0 0.2 0.4 0.6 0.8 1 gain pae gain (db) power added efficiency (%) frequency (ghz) 6 8 10 12 14 16 -20 -18 -16 -14 -12 -10 0 0.2 0.4 0.6 0.8 1 gain irl gain (db) input return loss (db) frequency (ghz)
gan wideband power amplifier, 28 v, 12.5 w 20 - 1000 mhz rev. v2 NPA1006 7 7 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 7 input return loss vs. frequency gain vs. frequency at p in = 27 dbm power added efficiency at p in = 27 dbm vs. frequency gain vs. frequency power added efficiency vs. frequency typical performance as measured in the broadband 100 - 1000 mhz characterization circuit: cw, v ds = 28 v, i dq = 88 ma (unless otherwise noted) input return loss at p in = 27 dbm vs. frequency -18 -17 -16 -15 -14 -13 0 0.2 0.4 0.6 0.8 1 +25c -40c +85c input return loss (db) frequency (ghz) 40 50 60 70 80 90 0 0.2 0.4 0.6 0.8 1 +25c -40c +85c power added efficiency (%) frequency (ghz) -18 -17 -16 -15 -14 -13 -12 0 0.2 0.4 0.6 0.8 1 p out = 30dbm p out = 40dbm p out = 41dbm input return loss (db) frequency (ghz) 10 20 30 40 50 60 70 80 90 0 0.2 0.4 0.6 0.8 1 p out = 30dbm p out = 40dbm p out = 41dbm power added efficiency (%) frequency (ghz) 10 11 12 13 14 15 0 0.2 0.4 0.6 0.8 1 p out = 30dbm p out = 40dbm p out = 41dbm gain (db) frequency (ghz) 10 11 12 13 14 15 0 0.2 0.4 0.6 0.8 1 +25c -40c +85c gain (db) frequency (ghz)
gan wideband power amplifier, 28 v, 12.5 w 20 - 1000 mhz rev. v2 NPA1006 8 8 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 8 input return loss vs. p out quiescent v gs vs. temperature power added efficiency vs. p out gain vs. p out typical performance as measured in the broadband 100 - 1000 mhz characterization circuit: cw, v ds = 28 v, i dq = 88 ma (unless otherwise noted) -1.5 -1.4 -1.3 -1.2 -1.1 -50 -25 0 25 50 75 100 44ma 88ma 150ma v gsq (v) temperature ( o c) 0 10 20 30 40 50 60 70 80 10 15 20 25 30 35 40 45 100mhz 500mhz 900mhz power added efficiency (%) p out (dbm) -18 -17 -16 -15 -14 -13 -12 10 15 20 25 30 35 40 45 100mhz 500mhz 900mhz input return loss (db) p out (dbm) 10.0 11.0 12.0 13.0 14.0 15.0 10 15 20 25 30 35 40 45 100mhz 500mhz 900mhz gain (db) p out (dbm)
gan wideband power amplifier, 28 v, 12.5 w 20 - 1000 mhz rev. v2 NPA1006 9 9 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 9 2 - tone imd vs. output power vs. i dq 2 - tone imd vs. output power ( 1 mhz tone spacing, i dq = 132 ma, f = 450 mhz ) 2 - tone gain vs. output power vs. i dq 2 - tone imd vs. tone spacing ( p out = 41 dbm - pep, i dq = 132 ma, f = 450 mhz ) typical 2 - tone performance as measured in the broadband 100 - 1000 mhz characteri- zation circuit: 1 mhz tone spacing, v ds = 28 v, i dq = 88 ma (unless otherwise noted) -60 -50 -40 -30 -20 -10 0.01 0.1 1 10 -imd3 +imd3 -imd5 +imd5 -imd7 +imd7 imd (dbc) p out (w-pep) 50 -50 -45 -40 -35 -30 -25 -20 -15 -10 0.1 1 10 100 -imd3 +imd3 -imd5 +imd5 -imd7 +imd7 imd (dbc) tone spacing (mhz) -50 -45 -40 -35 -30 -25 -20 -15 -10 0.01 0.1 1 10 44ma 88ma 132ma 150ma 176ma imd3 (dbc) p out (w-pep) 50 10 11 12 13 14 15 16 17 0.01 0.1 1 10 44ma 88ma 132ma 150ma 176ma gain (db) p out (w-pep) 50
gan wideband power amplifier, 28 v, 12.5 w 20 - 1000 mhz rev. v2 NPA1006 10 10 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 10 sample board and recommended tuning solution 20 - 1000 mhz broadband circuit (NPA1006 - smb) reference value tolerance manufacturer part number c1 10 f 20% tdk c2012x5r1c106m085ac c2 0.01 f 10% avx 06031c103jat2a c3 4.7 f 10% tdk c5750x7r2a475k230ka c4, c6 2400 pf - dielectric labs, inc. c08bl242x - 5un - x0 c5 4.7 pf 0.1 pf murata gqm2195c2e4r7bb12 r1 470 ? 1% panasonic erj - 3ekf4700v r2 0 ? - panasonic erj - 6gey0r00v l1 0.9 h 10% coilcraft 1008af - 901xjlc l2 5.4 nh 5% coilcraft 0906 - 5_lb pcb rogers ro4350, ? r =3.5, 0.020 al heat sink aluminum heat sink parts list c 1 10 m v gs v ds npa 1006 c 3 4 . 7 m m m rf out r 1 470 w c 4 2400 pf rf in r 2 0 w c 5 4 . 7 pf l 2 5 . 4 nh
gan wideband power amplifier, 28 v, 12.5 w 20 - 1000 mhz rev. v2 NPA1006 11 11 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 11 performance vs. frequency at p out = p sat performance vs. frequency at p out = 41 dbm performance vs. output power (f = 900 mhz) small signal s - parameters vs. frequency typical performance as measured in the broadband 20 - 1000 mhz sample board: cw, v ds = 28 v, i dq = 88 ma (unless otherwise noted) 10 15 20 25 30 -25 -20 -15 -10 -5 0 0.2 0.4 0.6 0.8 1 s21 s11 s22 s 21 (db) s 11 , s 22 (db) frequency (ghz) 0 10 20 30 40 40 50 60 70 80 0 0.2 0.4 0.6 0.8 1 gain psat drain eff gain (db) p sat (dbm), drain efficiency (%) frequency (ghz) 0 5 10 15 20 25 30 40 50 60 70 80 0 0.2 0.4 0.6 0.8 1 gain psat drain eff gain (db) p sat (dbm), drain efficiency (%) frequency (ghz) 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 0 10 20 30 40 50 60 70 80 15 20 25 30 35 40 45 gain drain eff gain (db) drain efficiency (%) p out (dbm)
gan wideband power amplifier, 28 v, 12.5 w 20 - 1000 mhz rev. v2 NPA1006 12 12 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 12 ? meets jedec moisture sensitivity level 3 requirements. plating is ni/pd/au lead - free 6 x 5 mm 8 - lead pdfn ? all dimensions shown as inches [mm].
gan wideband power amplifier, 28 v, 12.5 w 20 - 1000 mhz rev. v2 NPA1006 13 13 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 13 m/a - com technology solutions inc. all rights reserved. information in this document is provided in connection with m/a - com technology solutions inc ("macom") products. these materials are provided by macom as a service to its customers and may be used for informational purposes only. except as provided in macom's terms and conditions of sale for such products or in any separate agreement related to this document, macom assumes no liability whatsoever. macom assumes no responsibility for errors or omissions in these materials. macom may make changes to specifications and product descriptions at any time, without notice. macom makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. no license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. these materials are provided "as is" without warranty of any kind, either express or implied, relating to sale and/or use of macom products including liability or warranties relating to fitness for a particular purpose, consequential or incidental damages, merchantability, or infringement of any patent, copyright or other intellectual property right. macom further does not warrant the accuracy or completeness of the information, text, graphics or other items contained within these materials. macom shall not be liable for any special, indirect, incidental, or consequential damages, including without limitation, lost revenues or lost profits, which may result from the use of these materials. macom products are not intended for use in medical, lifesaving or life sustaining applications. macom customers using or selling macom products for use in such applications do so at their own risk and agree to fully indemnify macom for any damages resulting from such improper use or sale.

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